Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon

Amorphization of a n-type Czochralski wafer was achieved using a series of Si implants of 30 and 120 keV, each at a dose of 1310 cm. The Si implants produced a 2400 Å deep amorphous layer, which was then implanted with 4 keV 1310/cm B. Postimplantation anneals were performed in a tube furnace at 750 °C, for times ranging from 15 min to 6 h. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy ~TEM! was used to study the EOR defect evolution. Upon annealing, the boron peak showed no clustering, and TED was observed in the entire boron profile. TEM results show that both $311% defects and dislocation loops were present in the EOR damage region. The majority of the $311% defects dissolved in the interval between 15 min and 2 h. Results indicate that $311% defects release interstitials during the time that boron exhibits TED. These results show that there is a strong correlation between $311% dissolution in the EOR and TED in the regrown silicon layer. Quantitative TEM of dislocation loop growth and $311% dissolution indicates that in addition to $311% defects, submicroscopic sources of interstitials may also exist in the EOR which may contribute to TED. © 1999 American Institute of Physics. @S0003-6951~99!03848-6#